may. 20 1 1 . version 1 . 3 magnachip semiconductor ltd . 1 m dv152 8 C single n - channel trench mosfet 30v absolute maximu m ratings (ta = 25 o c) characteristics symbol rating unit drain - source voltage v dss 30 v gate - source voltage v gss 20 v continuous drain current (1) t c =25 o c (silico n limited) i d 2 6.4 a t c =25 o c (package limited) 16 t c = 70 o c 16 t a = 25 o c 1 0.1 (3) t a = 70 o c 8. 1 (3) pulsed drain current i dm 60 a power dissipation t c =25 o c p d 23. 1 w t c = 70 o c 1 4 . 8 t a = 25 o c 3.4 (3) t a = 70 o c 2.2 (3) single pulse a valanche energy (2) e as 20 mj junction and storage temperature range t j , t stg - 55~15 0 o c thermal characteristics characteristics symbol rating unit thermal resistance, junction - to - ambient (1) r ja 36 o c/w thermal resistance, junction - to - case r jc 5. 4 MDV1528 single n - channel t rench mosfet 30 v, 16 a, 1 8 . 8 m features ? v ds = 3 0v ? i d = 16 a @v gs = 10v ? r ds(on) < 1 8 . 8 m @v gs = 10v < 27 . 8 m @v gs = 4.5v ? 100% uil tested ? 100% rg tested general description the MDV1528 uses advanced magnachip s mosfet technology, which provide s high performance in on - state resistance , fast switching performance and excellent quality . MDV1528 is suitable for dc/dc converter and general purpose ap plications. p dfn 33 s s s g g s s s d d d d d d d d d g s
may. 20 1 1 . version 1 . 3 magnachip semiconductor ltd . 2 m dv152 8 C single n - channel trench mosfet 30v ordering information p art number temp. range package packing quantity rohs status mdv152 8u rh - 55~150 o c powerdfn33 tape & reel 5000 units h alogen free electrical characteristics (t j = 25 o c) characteristics symbol test condition min typ max unit static characteristics drain - source breakdown voltage bv dss i d = 250a, v gs = 0v 30 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1. 3 1.9 2.7 drain cut - off current i dss v ds = 30 v, v gs = 0v - - 1 a t j = 55 o c - - 5 gate leakage current i gss v gs = 20v, v ds = 0v - - 0 .1 drain - source on resistance r ds(on) v gs = 10v, i d = 8 a - 16.3 18.8 m t j = 125 o c - 23.6 27.3 v gs = 4.5v, i d = 6 a - 23.2 27.8 forward transconductance g fs v ds = 5v, i d = 8 a - 1 2.3 - s dynamic characteristics total gate charge q g(10v) v ds = 1 5.0 v, i d = 8 a, v gs = 10v 5.1 7.3 9.5 nc total gate charge q g(4.5v) 2.4 3.5 4.5 gate - source charge q gs - 1.5 - gate - drain charge q gd - 1.3 - input capacitance c iss v ds = 1 5. 0 v, v gs = 0v, f = 1.0mhz 319 456 593 pf reverse transfer capacitance c rss 30 42 56 output capacitance c oss 61 88 114 turn - on delay time t d(on) v gs = 10v, v ds = 1 5.0 v, i d = 8 a, r g = 3 . 0 - 5.5 - ns rise time t r - 3.2 - tu r n - off delay time t d(off) - 13.8 - fall time t f - 2.9 - gate resistance r g f=1 mhz 1.0 3. 0 4 .0 drain - source body diode characteristics source - drain diode forward voltage v sd i s = 8 a, v gs = 0v - 0. 8 5 1.1 v body diode reverse recovery time t rr i f = 8 a, dl/dt = 100a/s - 16. 1 24.2 ns body diode reverse recovery charge q rr - 8.3 12.4 nc note : 1. surface mounted fr - 4 board by jedec (jesd51 - 7) 2. e as is tested at starting tj = 25 , l = 0. 1 mh, i as = 10.8 a, v dd = 27v, v gs = 10v. . 3. t < 10sec.
may. 20 1 1 . version 1 . 3 magnachip semiconductor ltd . 3 m dv152 8 C single n - channel trench mosfet 30v fig.5 transfer characteristics fig.1 on - region charact eristics fig.2 on - resistance variation with drain current and gate voltage fig.3 on - resistance variation with temperature fig.4 on - resistance variation with gate to source voltage fig.6 body diode forward voltage variation with source current and temp erature -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v gs =10v i d =8a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 2 4 6 8 10 0 10 20 30 40 notes : i d = 8a t a = 25 r ds(on) [m ], drain-source on-resistance v gs , gate to source volatge [v] 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 10 -1 10 0 10 1 t a =25 notes : v gs = 0v i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 1 2 3 4 5 0 4 8 12 16 v gs , gate-source voltage [v] t a =25 notes : v ds = 5v i d , drain current [a] 5 10 15 20 0 5 10 15 20 25 30 v gs = 10v v gs = 4.5v drain-source on-resistance [m ? ] i d , drain current [a] 0.0 0.5 1.0 1.5 2.0 0 5 10 15 20 8.0v 4.5v 3.5v v gs = 10v 5.0v 4.0v 3.0v i d , drain current [a] v ds , drain-source voltage [v]
may. 20 1 1 . version 1 . 3 magnachip semiconductor ltd . 4 m dv152 8 C single n - channel trench mosfet 30v fig.7 gate charge characteristics fig.8 capacitance characteristics fig.9 maximum safe operating area fig.10 maximum drain current v s. case temperature fig.11 transient thermal response curve 0 2 4 6 8 0 2 4 6 8 10 note : i d = 8a v gs , gate-source voltage [v] q g , total gate charge [nc] 25 50 75 100 125 150 0 10 20 30 i d , drain current [a] t c , case temperature [ ] 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 notes : duty factor, d=t 1 /t 2 peak t j = p dm * z jc * r jc (t) + t c single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc , thermal response t 1 , rectangular pulse duration [sec] 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 1s 100 ms dc 10 ms 10s operation in this area is limited by r ds(on) single pulse t j =max rated t c =25 i d , drain current [a] v ds , drain-source voltage [v] 0 5 10 15 20 25 30 0 100 200 300 400 500 600 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v]
may. 20 1 1 . version 1 . 3 magnachip semiconductor ltd . 5 m dv152 8 C single n - channel trench mosfet 30v package dimension powerdfn33 (3.3x3.3mm) d imensions are in millimeters, unless otherwise specified
may. 20 1 1 . version 1 . 3 magnachip semiconductor ltd . 6 m dv152 8 C single n - channel trench mosfet 30v disclaimer: the products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfuncti on of any product can reasonably be expected to result in a personal injury. sellers customers using or selling sellers products for use in such applications do so at their own risk and agree to fully defend and indemnify seller. magnachip reserves the right to change the specifications and circuitry without notice at any time. magnachip does not consider responsibility for use of any circuitry other than circuitry entirely included in a magnachip product. is a registered trademark of magnachip semiconductor ltd.
|
